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| SI1900DL Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.480 @ VGS = 10 V 0.700 @ VGS = 4.5 V ID (A) 0.63 0.52 SOT-363 SC-70 (6-LEADS) S1 1 6 D1 Marking Code PB G1 2 5 G2 XX YY Lot Traceability and Date Code Part # Code D2 3 4 S2 Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS 5 secs 30 "20 0.63 Steady State Unit V 0.59 0.43 1.0 A 0.23 0.27 0.14 -55 to 150 W _C ID IDM IS PD TJ, Tstg 0.45 0.25 0.30 0.16 THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71251 S-21374--Rev. C, 12-Aug-02 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 360 400 300 Maximum 415 460 350 Unit _C/W C/W 1 SI1900DL Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 85_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 0.59 A VGS = 4.5 V, ID = 0.2 A VDS = 10 V, ID = 0.59 A IS = 0.23 A, VGS = 0 V 1.0 0.410 0.600 0.75 0.8 1.2 0.480 0.700 S V 1.0 "100 1 5 V nA mA m A W Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 0.23 A, di/dt = 100 A/ms VDD = 15 V, RL = 30 W ID ^ 0.5 A, VGEN = 10 V, RG = 6 W VDS = 15 V, VGS = 10 V, ID = 0.59 A 0.86 0.24 0.08 5 8 8 7 15 10 15 15 15 30 ns 1.4 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 1.0 VGS = 10 thru 4 V 0.8 I D - Drain Current (A) I D - Drain Current (A) 0.8 1.0 Transfer Characteristics 0.6 0.6 0.4 3V 0.2 0.4 TC = 125_C 0.2 25_C -55 _C 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 71251 S-21374--Rev. C, 12-Aug-02 SI1900DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 1.6 r DS(on) - On-Resistance ( W ) 60 Capacitance 50 1.2 C - Capacitance (pF) Ciss 40 0.8 VGS = 4.5 V VGS = 10 V 0.4 30 Coss 20 10 Crss 0.0 0.0 0 0.2 0.4 0.6 0.8 1.0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 0.59 A 8 1.8 On-Resistance vs. Junction Temperature VGS = 10 V ID = 0.59 A r DS(on) - On-Resistance ( W) (Normalized) 0.4 0.6 0.8 1.0 1.6 1.4 6 1.2 4 1.0 2 0.8 0 0.0 0.2 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 1 1.8 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) 1.5 I S - Source Current (A) 1.2 ID = 0.59 A TJ = 150_C 0.9 TJ = 25_C 0.6 0.3 0.1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71251 S-21374--Rev. C, 12-Aug-02 www.vishay.com 3 SI1900DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 5 Single Pulse Power 0.2 V GS(th) Variance (V) 4 ID = 250 mA Power (W) 3 -0.0 -0.2 2 -0.4 1 -0.6 -50 -25 0 25 50 75 100 125 150 0 10- 3 10- 2 10- 1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA =400_C/W t1 t2 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 4 Document Number: 71251 S-21374--Rev. C, 12-Aug-02 |
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